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RAP opportunity at Naval Research Laboratory     NRL

Epitaxial Growth and Characterization of Metal Oxide and Nitride Thin Films


Naval Research Laboratory, DC, Electronics Science & Technology Division

opportunity location
64.15.25.B8530 Washington, DC 203755321


name email phone
Neeraj Nepal 202.404.4621


Wide and ultra-wide band gap semiconductors such as group III-nitrides and -oxides are of research interest for next generation RF and compact power systems. This project focuses on epitaxial growth and characterization of group-III and transition metal nitrides, oxides, complex oxides, and oxide/nitride heterojunctions for high power and frequency device application. Epitaxial thin films and heterostructures will be grown by molecular beam epitaxy and/or atomic layer deposition/epitaxy and characterized by various structural, morphological, electrical, and optical characterization techniques.



Nepal N, et al: Applied Physics Express 9: 021003, 2016

Nepal N, et al: Thin Solid Films 589: 47, 2015

Nepal N, et al: Crystal Growth and Design 13: 1485, 2013


key words
Epitaxial thin films; MBE growth; III-nitrides; Metal oxides; Complex oxides; ALD/E; High frequency materials; Growth and characterization;


Citizenship:  Open to U.S. citizens and permanent residents
Level:  Open to Postdoctoral applicants


Base Stipend Travel Allotment Supplementation
$94,199.00 $3,000.00
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