Wide and ultra-wide band gap semiconductors such as group III-nitrides and -oxides are of research interest for next generation RF and compact power systems. This project focuses on epitaxial growth and characterization of group-III and transition metal nitrides, oxides, complex oxides, and oxide/nitride heterojunctions for high power and frequency device application. Epitaxial thin films and heterostructures will be grown by molecular beam epitaxy and/or atomic layer deposition/epitaxy and characterized by various structural, morphological, electrical, and optical characterization techniques.

 

References

Nepal N, et al: Applied Physics Express 9: 021003, 2016

Nepal N, et al: Thin Solid Films 589: 47, 2015

Nepal N, et al: Crystal Growth and Design 13: 1485, 2013

 

key words

Epitaxial thin films; MBE growth; III-nitrides; Metal oxides; Complex oxides; ALD/E; High frequency materials; Growth and characterization;

Citizenship:  Open to U.S. citizens and permanent residents

Level:  Open to Postdoctoral applicants