NRC Research Associate Programs
Fellowships Office
Policy and Global Affairs

Participating Agencies

Opportunity at Naval Research Laboratory   NRL

Epitaxial Growth and Characterization of Metal Oxide and Nitride Thin Films


Naval Research Laboratory, DC, Electronics Science & Technology Division

opportunity location
64.15.25.B8530 Washington, DC 203755321


name email phone
Neeraj Nepal 202.404.4621


Wide and ultra-wide band gap semiconductors such as group III-nitrides and -oxides are of research interest for next generation RF and compact power systems. This project focuses on epitaxial growth and characterization of group-III and transition metal nitrides, oxides, complex oxides, and oxide/nitride heterojunctions for high power and frequency device application. Epitaxial thin films and heterostructures will be grown by molecular beam epitaxy and/or atomic layer deposition/epitaxy and characterized by various structural, morphological, electrical, and optical characterization techniques.



Nepal N, et al: Applied Physics Express 9: 021003, 2016

Nepal N, et al: Thin Solid Films 589: 47, 2015

Nepal N, et al: Crystal Growth and Design 13: 1485, 2013


key words
Epitaxial thin films; MBE growth; III-nitrides; Metal oxides; Complex oxides; ALD/E; High frequency materials; Growth and characterization;


Citizenship:  Open to U.S. citizens and permanent residents
Level:  Open to Postdoctoral applicants


Base Stipend Travel Allotment Supplementation
$94,199.00 $3,000.00
Copyright © 2022. National Academy of Sciences. All rights reserved.Terms of Use and Privacy Policy