Atomic Layer Deposition for Neuromorphic and Photonic Applications

Atomic layer deposition (ALD) is a key technique for depositing uniform, conformal thin film oxides and other materials necessary for nascent neuromorphic and photonic applications. Materials of interest include ALD-grown Mott-transition oxides (e.g., vanadium oxide, niobium oxide) and ternary oxide compounds for achieving tunable materials properties to support the development of integrated nanoscale electronic and optical devices. The ideal candidate will have extensive experience with ALD, as well as a strong materials science background for analyzing and characterizing electronic thin films. Work is expected to be completed using a dedicated ALD system, as well as device fabrication (lithography, RIE, etc.) and materials characterization facilities (e.g., XRD, XPS, XRR, AFM, SEM, etc.) located within the Division and at the NRL Nanoscience Institute.

Additional Benefits

Awardees who reside more than 50 miles from their host laboratory and remain on tenure for at least six months are eligible for paid relocation to within the vicinity of their host laboratory.

A group health insurance program is available to awardees and their qualifying dependents in the United States.