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RAP opportunity at Naval Research Laboratory     NRL

Materials Scientist in Atomic Layer Deposition (ALD)


Naval Research Laboratory, DC, Electronics Science & Technology Division

opportunity location
64.15.25.C0405 Washington, DC 203755321


name email phone
Hans S Cho 202-767-0032


Atomic Layer Deposition for Neuromorphic and Photonic Applications

Atomic layer deposition (ALD) is a key technique for depositing uniform, conformal thin film oxides and other materials necessary for nascent neuromorphic and photonic applications. Materials of interest include ALD-grown Mott-transition oxides (e.g., vanadium oxide, niobium oxide) and ternary oxide compounds for achieving tunable materials properties to support the development of integrated nanoscale electronic and optical devices. The ideal candidate will have extensive experience with ALD, as well as a strong materials science background for analyzing and characterizing electronic thin films. Work is expected to be completed using a dedicated ALD system, as well as device fabrication (lithography, RIE, etc.) and materials characterization facilities (e.g., XRD, XPS, XRR, AFM, SEM, etc.) located within the Division and at the NRL Nanoscience Institute.

key words
atomic layer deposition; oxide memristors; neuromorphic computing devices;


Citizenship:  Open to U.S. citizens and permanent residents
Level:  Open to Postdoctoral applicants


Base Stipend Travel Allotment Supplementation
$94,199.00 $3,000.00
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