As device structure dimensions are reduced and complexity is increased there is need to develop novel deposition methods for obtaining conformal, high quality epitaxial thin films at low processing temperatures.  This will help overcome traditional deposition limitations, allowing for access to more regions of phase diagrams and enable dissimilar materials integration for heterostructures with increased functionality and flexibility.  Specific areas of research include: tailoring the properties of phase change materials for active modulation and control of visible/infrared signals; integration of metastable wide- and ultrawide- bandgap semiconductors to promote novel RF heterojunctions; attaining epitaxial, electronic grade structures on flexible and temperature sensitive substrates; and controlling properties of superconducting materials specifically those directly integrated with semiconductors of interest for novel quantum applications.  This position requires expertise in thin film deposition methods, particularly those with atomic layer deposition (ALD) experience. Candidates will be expected to conduct experiments investigating the structure-property relationships of ALD thin films, perform routine maintenance on vacuum deposition system, and contribute to design and building of new tooling capabilities aimed at identifying mechanisms of atomic layer processes and modifying techniques to promote epitaxial thin films at low temperatures.  Candidates will also be expected to work closely with Plasma Physics Division personnel to achieve these goals.  Additionally, basic skills in data processing/programing software (such as excel, origin, labview, etc) and materials characterization techniques (AFM, SEM, XRD, C-V, I-V, hall measurement, etc.) are highly advantageous.  

Additional Benefits

Awardees who reside more than 50 miles from their host laboratory and remain on tenure for at least six months are eligible for paid relocation to within the vicinity of their host laboratory.

A group health insurance program is available to awardees and their qualifying dependents in the United States.