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RAP opportunity at Naval Research Laboratory     NRL

Atomic Layer Deposition of Electronic Thin Films

Location

Naval Research Laboratory, DC, Electronics Science & Technology Division

opportunity location
64.15.25.C0804 Washington, DC 203755321

Advisers

name email phone
Virginia Wheeler virginia.wheeler@nrl.navy.mil 202-404-4450

Description

As device structure dimensions are reduced and complexity is increased there is need to develop novel deposition methods for obtaining conformal, high quality epitaxial thin films at low processing temperatures.  This will help overcome traditional deposition limitations, allowing for access to more regions of phase diagrams and enable dissimilar materials integration for heterostructures with increased functionality and flexibility.  Specific areas of research include: tailoring the properties of phase change materials for active modulation and control of visible/infrared signals; integration of metastable wide- and ultrawide- bandgap semiconductors to promote novel RF heterojunctions; attaining epitaxial, electronic grade structures on flexible and temperature sensitive substrates; and controlling properties of superconducting materials specifically those directly integrated with semiconductors of interest for novel quantum applications.  This position requires expertise in thin film deposition methods, particularly those with atomic layer deposition (ALD) experience. Candidates will be expected to conduct experiments investigating the structure-property relationships of ALD thin films, perform routine maintenance on vacuum deposition system, and contribute to design and building of new tooling capabilities aimed at identifying mechanisms of atomic layer processes and modifying techniques to promote epitaxial thin films at low temperatures.  Candidates will also be expected to work closely with Plasma Physics Division personnel to achieve these goals.  Additionally, basic skills in data processing/programing software (such as excel, origin, labview, etc) and materials characterization techniques (AFM, SEM, XRD, C-V, I-V, hall measurement, etc.) are highly advantageous.  

key words
Atomic layer deposition; epitaxial; thin films; material deposition; material characterization; crystal growth; electronic materials; optoelectronic materials

Eligibility

Citizenship:  Open to U.S. citizens and permanent residents
Level:  Open to Postdoctoral applicants

Stipend

Base Stipend Travel Allotment Supplementation
$94,199.00 $3,000.00
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