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Opportunity at Naval Research Laboratory   NRL

Atomic Layer Deposition for Optoelectronics

Location

Naval Research Laboratory, DC, Electronics Science & Technology Division

opportunity location
64.15.25.C0827 Washington, DC 203755321

Advisers

name email phone
Jill A Nolde jill.nolde@nrl.navy.mil 202.767.0358

Description

This opportunity involves the development and utilization of thin films deposited by atomic layer deposition (ALD) for novel optoelectronic devices and applications. Topics of interest include development of oxides for passivation/encapsulation of III-V semiconductor-based infrared detectors and photovoltaics, passivation/doping of colloidal quantum dots, and study of thin film superlattices to form epsilon-near-zero or mu-near-zero metamaterials for integrated optoelectronics, emission enhancement and control, or non-linear interactions. The ideal candidate will be experienced with ALD as well as the analysis and characterization of optoelectronic thin films (e.g. XPS, AFM, SEM, TEM, photoluminescence, ellipsometry). Available facilities include: the Institute for Nanoscience (https://www.nrl.navy.mil/nanoscience/), which contains a class 100 cleanroom facility with state-of-the-art tools for fabrication & characterization and a dedicated KJLC ALD150LX system with integrated glove box.

key words
ALD; thin film deposition; material characterization; optoelectronic materials; metal oxides; nanofabrication; infrared photodetectors

Eligibility

Citizenship:  Open to U.S. citizens and permanent residents
Level:  Open to Postdoctoral applicants

Stipend

Base Stipend Travel Allotment Supplementation
$94,199.00 $3,000.00
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