Silicon-based devices are rapidly approaching fundamental performance limits; therefore, next-generation computing and power switching needs require advanced high-performance devices based on novel electronic materials. To meet these requirements, wide-bandgap materials such as GaN, SiC, and Diamond have been proposed for power switching and RF devices. This research opportunity will (1) study the fundamentals of dopant activation in wide-bandgap materials, (2) develop high voltage III-N, III-O, and Diamond power devices, and (3) investigate novel devices resulting from the integration of these materials, including graphene and diamond/lll-N heterojunctions.

Refs:

Silicon Ion Implant Activation in beta-(Al0.2Ga0.8)2O3, JEM 53, pg 2811-2816 (2024) https://link.springer.com/article/10.1007/s11664-024-11075-z

Efficient Activation and High Mobility of Ion-Implanted Silicon for Next-Generation GaN Devices, Crystals 13(5), 736 (2023) https://doi.org/10.3390/cryst13050736

Additional Benefits

Awardees who reside more than 50 miles from their host laboratory and remain on tenure for at least six months are eligible for paid relocation to within the vicinity of their host laboratory.

A group health insurance program is available to awardees and their qualifying dependents in the United States.