RAP opportunity at National Institute of Standards and Technology NIST
Power Electronics Performance and Reliability
Location
Physical Measurement Laboratory, Nanoscale Device Characterization Division
| opportunity |
location |
|
| 50.68.03.B7333 |
Gaithersburg, MD 20899 |
NIST only participates in the February and August reviews.
Advisers
| name |
email |
phone |
|
| Kin P. Cheung |
kin.cheung@nist.gov |
301.975.3093 |
Description
Wide bandgap power device is poised to transform the energy landscape of the United States. However, reliability concern remains a key hurdle. In many power applications, failure is not an option. How can we assure that high reliability is achieved? This is a very hard problem in need of a solution. We focus on the physics of reliability and develop physics based electrical measurement methods that the industry can use and their customer can trust.
key words
Power device; Defect; Wide bandgap; SiC; GaN; Ga2O3; Electrical characterization; Reliability
Eligibility
Citizenship:
Open to U.S. citizens
Level:
Open to Postdoctoral applicants
Stipend
| Base Stipend |
Travel Allotment |
Supplementation |
|
| $82,764.00 |
$3,000.00 |
|
|