Low-dimensional electronic materials, including few-atoms thick 2D semiconductors, topological insulators and superconductors, have attracted considerable attention for potential application in nanoscale devices, including beyond-CMOS electronics, quantum computers, chemical sensors, photodetectors, etc. Prospective advantages over traditional thin-film devices include exceptional structural quality, high surface-to-volume ratio, bottom-up device engineering with high-density on-chip integration, and utilization of quantum size effects. In this project, we are developing metrology needed for the synthesis, processing, and characterization of low-dimensional materials to enable reliable nanoscale device development and manufacturing. We operate several chemical vapor transport and directional solidification reactors for scalable fabrication of transition metal dichalcogenides and other layered van-der-Waals materials. These fabrication tools are complemented by post-growth device assembly, nanoscale structural/electrical/optical measurements, and comprehensive multiscale & multiphysics material and device modeling. We are open to extending these approaches to new classes of electronic materials as guided by emerging technology needs.

We are interested in research topics related to the fabrication and scalable assembly of low-dimensional structures with controlled properties into functional devices and to the development of methods for correlating their structural, compositional, electrical, and optical properties to enable a broad range of electronic, photonic, and sensor applications, including for flexible/transparent electronics, beyond-CMOS logic and memory, quantum computing, etc. Excellent collaborative opportunities exist with staff in other NIST laboratories, as well as with other federal labs.

 

key words

Electronic materials; quantum materials; topological materials; low-dimensional semiconductors; 2D layers; transition metal dichalcogenides; crystal growth; electronics; chemical sensors; energy; beyond CMOS devices;

Citizenship:  Open to U.S. citizens

Level:  Open to Postdoctoral applicants