RAP opportunity at National Institute of Standards and Technology NIST
Microwave Materials for High-Speed Microelectronics
Location
Communications Technology Laboratory, Radio Frequency Technology Division
opportunity |
location |
|
50.67.22.B8436 |
Boulder, CO |
NIST only participates in the February and August reviews.
Advisers
name |
email |
phone |
|
Nathan Daniel Orloff |
orloff@nist.gov |
303.497.4938 |
Description
The Communications Technology Laboratories (CTL) at NIST is looking for a research assistant to work developing mm-wave components from complex oxides. This project will involve dc to 110 GHz complex permittivity and permeability characterization with on-wafer techniques, materials modeling (including finite element simulations, and theory), and the development of mm-wave and microwave components. To develop this program in oxide electronics, a successful applicant will have a solid background in programming (Matlab, Python, or equivalent). Experience with any of the following lock-amplifiers, vector network analyzers, resonators is preferred. The preferred candidates will want to gain experience with circuit simulators and device modeling, leveraging fundamental physics to create new technology.
Reference
Lee CH, et al: Exploiting dimensionality and defect mitigation to create tunable microwave dielectrics. Nature 502: 532-536, 2013
key words
Electronics; Microelectronics; Machine learning; Data informatics; Physics; Terahertz; Metrology;
Eligibility
Citizenship:
Open to U.S. citizens
Level:
Open to Postdoctoral applicants
Stipend
Base Stipend |
Travel Allotment |
Supplementation |
|
$82,764.00 |
$3,000.00 |
|
|