Successfully engineering quantum materials by stacking atomically thin layers of materials such as transition metal dichalcogenides and graphene can lead to emergent properties such as superconductivity and metal/insulator transitions. Stacks of 2D materials must be accurately fabricated with non-equilibrium crystallographic angles that have sub-degree accuracy. It is critical to develop measurements and test structures for such 2D systems in order to probe and properly extract their fundamental quantum properties. We are carrying out basic research to develop measurements of devices that harness the emergent properties of atomically engineered two-dimensional systems for future computing applications. Quantum transport measurements are carried out on test structures and prototypical devices at temperatures from approximately 300 mK to 400 K and at magnetic fields up to 14 T to determine the fundamental properties of heterostructures and candidate next-generation devices. The results of this research will facilitate the use of quantum materials based on heterostructures of two-dimensional materials for advanced nanoelectronics and quantum information science.