RAP opportunity at National Institute of Standards and Technology NIST
Physics and applications of high binding energy excitons
Location
Physical Measurement Laboratory, Nanoscale Device Characterization Division
opportunity |
location |
|
50.68.03.C0862 |
Gaithersburg, MD 20899 |
NIST only participates in the February and August reviews.
Advisers
name |
email |
phone |
|
Emily Geraldine Bittle |
emily.bittle@nist.gov |
301 975 6298 |
Jared Kenneth Wahlstrand |
jared.wahlstrand@nist.gov |
301 975 2547 |
Description
Excitons with high binding energy (HBEE) provide a possible route toward room temperature sensing and future computing. In this project, we explore the physics and applications of materials and polariton systems with HBEE using ultrafast spectroscopy techniques, electronic and magnetic control, and materials and sample design. Materials of interest include organic molecules and polymers, 2D materials, perovskites, etc. Ultrafast optical techniques include TAS, time-resolved fluorescence, 2D spectroscopy, and pump-probe spectral interferometry. Opto-electronic device studies include design, fabrication, and measurement using NIST's nanofab, low temperature current-voltage, impedance and CV, electroluminescence, and photocurrent.
key words
exciton; semiconductor; spectroscopy; optical; electronic
Eligibility
Citizenship:
Open to U.S. citizens
Level:
Open to Postdoctoral applicants
Stipend
Base Stipend |
Travel Allotment |
Supplementation |
|
$82,764.00 |
$3,000.00 |
|
|